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    <journal-meta>
      <journal-id journal-id-type="issn">1561-5405</journal-id>
	    <journal-id journal-id-type="doi">10.24151/1561-5405</journal-id>	  
      <journal-id journal-id-type="publisher-id">Proceedings of Universities. Electronics</journal-id>
      <journal-title-group>
        <journal-title xml:lang="en">Scientifical and technical journal "Proceedings of Universities. Electronics"</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технический журнал «Известия высших учебных заведений. Электроника»</trans-title>
        </trans-title-group>        
      </journal-title-group>      
      <issn publication-format="print">1561-5405</issn>
      <issn publication-format="online">2587-9960</issn>
      <publisher>
        <publisher-name xml:lang="en">National Research University of Electronic Technology</publisher-name>
        <publisher-name xml:lang="ru">Национальный исследовательский университет "Московский институт электронной техники"</publisher-name>
      </publisher>
    </journal-meta>
    <article-meta>                                    
      
    <article-id pub-id-type="doi">10.24151/1561-5405-2025-30-2-140-148</article-id><article-id pub-id-type="risc">DAVIGM</article-id><article-id pub-id-type="udk">537.323</article-id><article-categories><subj-group><subject>Mатериалы электроники</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Investigation of the property stability for low-temperature nanostructured thermoelectric materials based on BiTeSe and BiSbTe</article-title><trans-title-group xml:lang="ru"><trans-title>Исследование стабильности свойств низкотемпературных наноструктурированных термоэлектрических материалов на основе BiTeSe и BiSbTe</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><string-name xml:lang="ru">Штерн Максим Юрьевич</string-name><name-alternatives><name xml:lang="ru"><surname>Штерн</surname><given-names>Максим Юрьевич</given-names></name><name xml:lang="en"><surname>Shtern</surname><given-names>Maxim Yu.</given-names></name></name-alternatives><string-name xml:lang="en">Maxim Yu. Shtern</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Шерченков Алексей Анатольевич</string-name><name-alternatives><name xml:lang="ru"><surname>Шерченков</surname><given-names>Алексей Анатольевич</given-names></name><name xml:lang="en"><surname>Sherchenkov</surname><given-names>Alexey A.</given-names></name></name-alternatives><string-name xml:lang="en">Alexey A. Sherchenkov</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Штерн Юрий Исаакович</string-name><name-alternatives><name xml:lang="ru"><surname>Штерн</surname><given-names>Юрий Исаакович</given-names></name><name xml:lang="en"><surname>Shtern</surname><given-names>Yuri I.</given-names></name></name-alternatives><string-name xml:lang="en">Yuri I. Shtern</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Бабич Алексей Вальтерович</string-name><name-alternatives><name xml:lang="ru"><surname>Бабич</surname><given-names>Алексей Вальтерович</given-names></name><name xml:lang="en"><surname>Babich</surname><given-names>Alexey V.</given-names></name></name-alternatives><string-name xml:lang="en">Alexey V. Babich</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Рогачев Максим Сергеевич</string-name><name-alternatives><name xml:lang="ru"><surname>Рогачев</surname><given-names>Максим Сергеевич</given-names></name><name xml:lang="en"><surname>Rogachev</surname><given-names>Maxim S.</given-names></name></name-alternatives><string-name xml:lang="en">Maxim S. Rogachev</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Бабич Татьяна Александровна</string-name><name-alternatives><name xml:lang="ru"><surname>Бабич</surname><given-names>Татьяна Александровна</given-names></name><name xml:lang="en"><surname>Babich</surname><given-names>Tatyana A.</given-names></name></name-alternatives><string-name xml:lang="en">Tatyana A. Babich</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Марончук Игорь Игоревич</string-name><name-alternatives><name xml:lang="ru"><surname>Марончук</surname><given-names>Игорь Игоревич</given-names></name><name xml:lang="en"><surname>Maronchuk</surname><given-names>Igor I.</given-names></name></name-alternatives><string-name xml:lang="en">Igor I. Maronchuk</string-name><xref ref-type="aff" rid="AFF-2"/></contrib><aff id="AFF-1" xml:lang="ru">National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)</aff><aff id="AFF-2" xml:lang="ru">JSC “Optron” (Russia, 105187, Moscow, Shcherbakovskaya st., 53)</aff></contrib-group><pub-date iso-8601-date="2025-09-04" date-type="pub" publication-format="electronic"><day>04</day><month>09</month><year>2025</year></pub-date><volume>Том. 30 №2</volume><issue>2</issue><fpage>140</fpage><lpage>148</lpage><self-uri>http://ivuz-e.ru/en/issues/.Том 30 №2/issledovanie_stabilnosti_svoystv_nizkotemperaturnykh_nanostrukturirovannykh_termoelektricheskikh_mat/</self-uri><abstract xml:lang="en"><p>A promising method for increasing the efficiency of thermoelectric (TE) energy converters as alternate energy sources is the nanostructuring of TE materials used for fabrication of TE elements. Wide spreading of TE devices is hampered by their low efficiency that is defined by thermoelectric figure of merit ZT of TE elements. In this work, the stability of the properties of low-temperature nanostructured TE materials based on solid solutions of n-type Bi2Te2.8Se0.2 (0.16 wt. % CdCl2) and p-type Bi0.5Sb1.5Te3 (2.2 wt. % Te and 0.16 wt. % TeI4), obtained by grinding the synthesized materials in a planetary ball mill and subsequent compaction by spark plasma sintering. TE materials Bi2Te2.8Se0.2 and Bi0.5Sb1.5Te3 have high maximum ZT values of 1.17 and 1.23, respectively. The thermal stability of Bi2Te2.8Se0.2 and Bi0.5Sb1.5Te3 materials properties was studied using multiple measurements by differential scanning calorimetry and thermogravimetry. Thermoelectric and electrophysical characteristics of TE materials at temperatures up to 500 K were obtained. It has been established that nanostructuring has no significant effect on the thermal stability of the low-temperature nanostructured TE materials under study.</p></abstract><trans-abstract xml:lang="ru"><p>Перспективным методом повышения эффективности термоэлектрических преобразователей энергии как источников альтернативной энергии является наноструктурирование термоэлектрических материалов, используемых для изготовления термоэлементов. Широкому распространению термоэлектрических устройств препятствует их низкая эффективность, которая определяется термоэлектрической добротностью ZT термоэлектрических материалов. В работе исследована стабильность свойств низкотемпературных наноструктурированных термоэлектрических материалов на основе твердых растворов Bi2Te2,8Se0,2 &amp;#40;0,16 масс. &amp;#37; CdCl2&amp;#41; n-типа и Bi0,5Sb1,5Те3 &amp;#40;2,2 масс. &amp;#37; Те и 0,16 масс. &amp;#37; TeI4&amp;#41; p-типа, полученных в результате измельчения в планетарной шаровой мельнице и последующего компактирования методом искрового плазменного спекания. Термоэлектрические материалы Bi2Te2,8Se0,2 и Bi0,5Sb1,5Те3 имеют высокие максимальные значения термоэлектрической добротности ZT, равные 1,17 и 1,23 соответственно. Термическая стабильность свойств материалов Bi2Te2,8Se0,2 и Bi0,5Sb1,5Те3 исследована с помощью многократных измерений методами дифференциальной сканирующей калориметрии и термогравиметрии. Получены термоэлектрические и электрофизические характеристики термоэлектрических материалов при температурах до 500 К. Установлено, что наноструктурирование не оказывает существенного влияния на термическую стабильность исследованных низкотемпературных наноструктурированных термоэлектрических материалов.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>thermoelectricity</kwd><kwd>thermal properties</kwd><kwd>stability</kwd><kwd>thermoelectric generator</kwd><kwd>TEG</kwd></kwd-group><kwd-group xml:lang="en"><kwd>thermoelectricity</kwd><kwd>thermal properties</kwd><kwd>stability</kwd><kwd>thermoelectric generator</kwd><kwd>TEG</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">работа выполнена при финансовой поддержке Минобрнауки России в рамках государственного задания (Соглашение FSMR-2023-0014).</funding-statement><funding-statement xml:lang="ru">the work has been supported by the Ministry of Science and Higher Education of the Russian Federation under the state assignment (Agreement FSMR-2023-0014).</funding-statement></funding-group></article-meta>
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